Development of Germanium-Silicon Growth Technology.
Abstract
Germanium-silicon epitaxial heterostructures have been grown and evaluated for possible use in far-infrared detectors. Growth was performed by ultra-high vacuum chemical vapor deposition at temperatures of 550-600 deg C. Multiple quantum well structures were grown and evaluated by X-ray diffraction, secondary ion mass spectrometry, and photoluminescence. Infrared absorption measurements showed that free-carrier absorption was dominant for normal-incidence illumination. Heterojunction internal photoemission structures have also been grown and characterized. The results show that both structures can be successfully fabricated using this technique when growth parameters are correctly chosen. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 15, 1995
- Accession Number
- ADA293199
Entities
People
- D. W. Greve
Organizations
- Carnegie Mellon University