InP Solar Cell Development on Inexpensive Si Substrates.
Abstract
Purpose: Examine whether InP cell efficiency can be improved by use of a high bandgap pseudomorphic window to reduce surface recombination. PN and NP InP cells on InP wafers were made with 500A InGaP (1.9 eV) and InAlAs (1.5 eV) windows, as well as no windows (controls). Improvements in the baseline InP cell technology would improve the overall InP/Si cell efficiency. jg p.1
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 22, 1995
- Accession Number
- ADA293281