IR Materials Producibility.

Abstract

The work summarized in this report covers the ninth quarter of a program with a goal that is threefold: first, to study the properties of native point defects in infrared focal-plane array (IRFPA) active and substrate materials; second, to study the properties of native point defects in two classes of photonic materials, the wide-gap II-VI compounds (ZnSe as the prototype for which impurity properties will also be calculated) and the nonlinear optical materials (LiNbO3 as the prototype); the third, to study the properties of HgZnTe as a very-long-wave infrared (VLWIR) detector material. During the ninth quarter: Completed the calculation of the Hall coefficient in HgCdTe and related materials. Completed two papers for presentation at the MCT workshop. jg

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Document Details

Document Type
Technical Report
Publication Date
Apr 13, 1995
Accession Number
ADA293330

Entities

People

  • A. Sher
  • M. A. Berding Sr.
  • S. Krishnamurthy Sr

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Boltzmann Equation
  • Chemical Reactions
  • Coefficients
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Diffusion Coefficient
  • Electronics Laboratories
  • Energy Bands
  • High Temperature
  • Long-Wavelength Infrared Radiation
  • Materials
  • Point Defects
  • Semiconductors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering