Si-Device-Related Interface Research.
Abstract
This program aimed at understanding some of the key materials issues relevant to electronic-device miniaturization. In particular, it focused on understanding atomic scale processes that occur during oxidation and etching of Si surfaces. In our studies, we used scanning tunneling microscopy to obtain sub-nanometer resolution of the surface structure and photoelectron spectroscopy to obtain chemical information. The initial stages of the project focused on the oxidation of Si(100) with H2O. Subsequent investigations emphasized the interactions of Si(100) with halogen molecules, with parallel investigations of halogen etching of GaAs(1 10). jg p. 5
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1994
- Accession Number
- ADA293587
Entities
People
- John H. Weaver
Organizations
- University of Minnesota