Longwavelength InAsSB Infrared Photodetectors,

Abstract

This work was intended to explain basic questions related to long-wavelength InAsSb photodetectors. Can InAsSb be used for IR photodetectors operating at 200-300 K in the entire 8-14 micrometers region? What is the photoconductivity lifetime? What are limitations to the performance of InAsSb photoconductive and photovoltaic detectors? What are the limits? Can InAsSb compete with HgCdTe in applications for LWIR photodetectors? Demonstration of near room temperature 10.6 micrometers IR photodetector. What should be done to improve the performance further? How to obtain focal plane array. jg

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1995
Accession Number
ADA294029

Entities

People

  • Manijeh Razeghi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Charge Carriers
  • Chemical Vapor Deposition
  • Chemistry
  • Detection
  • Detectors
  • Electronics Industry
  • Energy Bands
  • Heat Energy
  • Long Wavelengths
  • Low Temperature
  • Materials
  • Measurement
  • Narrow Band Gap Semiconductors
  • Photoconductive Detectors
  • Semiconductors
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology