Correlation of Wafer Level QA Tests with Functional Device Yield and Accelerated Life Test Results.

Abstract

This report covers work that was to correlate wafer level test structure tests with life tests by utilizing test structures collocated with a RAM-like device. Wafer level tests for oxide breakdown, electromigration, and hot carrier degradation were conducted on a total of six wafer lots from three vendors. Functional testing of the RAM-like device yielded just over six hundred devices to be packaged for the life test. The data from the wafer level and life testing indicate that the oxide breakdown wafer level test is able to be correlated to both functional yield and life test results. This study was not able to conclusively correlate the wafer level electromigration or hot carrier testing to the life test results. Further study with a much larger sample size and a longer life test needs to be performed to further address this issue. jg

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1995
Accession Number
ADA294194

Entities

People

  • Vance C. Tyree

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Application-Specific Integrated Circuits
  • Bipolar Junction Transistors
  • Current Density
  • Diagrams
  • Failure Analysis
  • Failure Mode And Effect Analysis
  • Information Science
  • Life Tests
  • Power Supplies
  • Reliability
  • Semiconductors
  • Silicon Controlled Rectifiers
  • Standards
  • Test And Evaluation
  • Test Methods
  • Transistors

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.
  • Software Engineering
  • Structural Health Monitoring of Composite Structures.