High-Temperature Annealing Properties of SiGe/GaP Alloys.
Abstract
As discovered in annealing studies with SiGe/GaP alloys, further improvements are attained in the thermoelectric power factor (alpha(2).sigma) of the material after three-step annealing (high temperature-low temperature-high temperature) of this alloy. (MM)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 25, 1995
- Accession Number
- ADA294224
Entities
People
- D. M. Rowe
- Gao Min
Organizations
- National Air and Space Intelligence Center