The Role of Nickel in Si(001) Roughening.

Abstract

The role of Ni impurities on the structure of the Si(001)-(2x1) surface has been investigated by statistically comparing STM patterns with Auger spectra. Characteristic reconstructed local structures (split off dimers' and vacancy channels') are observed for different surface concentrations of Ni as measured by Auger electron spectroscopy, and it is shown that the STM image provides a high sensitivity to Ni. For high levels of Ni contamination, long range roughening of the Si(001) surface is observed resulting in more than 30 A corrugation and loss of atomic structure as detected by the STM. Crystal support cleaning procedures and crystal annealing procedures have been devised permitting Si(001) crystals to be repeatedly heated over long time periods without undergoing surface contamination or macroscopic roughening. jg

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Document Details

Document Type
Technical Report
Publication Date
May 10, 1995
Accession Number
ADA294456

Entities

People

  • John Yates
  • V. A. Ukraintsev

Organizations

  • University of Pittsburgh

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Atomic Structure
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Contamination
  • Electron Diffraction
  • Electron Energy
  • Electron Spectroscopy
  • Electronics Industry
  • Electrons
  • Measurement
  • Microscopy
  • Military Research
  • Sensitivity
  • Spectra
  • Spectroscopy

Fields of Study

  • Physics

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene