Investigation of GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperature.
Abstract
Over the three-year course of this program, the low-temperature-grown (LTG) GaAs and AlGaAs have been incorporated as the gate insulator or surface passivation in a variety of field-effect-transistors (FETs). The LTG GaAs used as the surface passivation layer in a metal-semiconductor FET (MESFET) with a novel overlapping gate structure increased the breakdown voltage by two folds compared to a regular MESFET. The LTG GaAs passivation also greatly improved the surface quality of the device, resulting in a reduced low-frequency noise and minimal frequency dispersions of the transconductance and the output resistance. The mechanisms for the improved breakdown voltage have been studied by computer simulation. Self-aligned GaAs metal- insulator-semiconductor FETs (MISFETs) having an LTG GaAs gate insulator--have been developed. The performance of the MISFET was improved significantly by the ion-implanted high-doping-concentration source and drain regions. A variety of the LTG GaAs and LTG AlGaAs with different Al mole fractions, that can used as the gate insulator, have been grown to study the effects of the growth temperature and the thickness on the properties of the MISFETs. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 10, 1995
- Accession Number
- ADA294512
Entities
People
- Chang-lee Chen
Organizations
- Massachusetts Institute of Technology