Development of Thin Film Diamond Based Integrated Circuit Technology.
Abstract
In the portion of this project funded by BMDO/IST, we have been developing the elements of a diamond based semiconductor technology for high temperature applications. The approach is centered around incorporating a Schottky barrier contact and MOS field effect transistor using diamond films prepared by microwave plasma chemical vapor deposition (MPACVD). The experimental basis for this research is the successful fabrication in our laboratory of the world's first Schottky diodes with PACVD diamond base. These devices have characteristics similar to their counterparts fabricated using single crystal synthetic diamond prepared by high pressure methods. This has required a detailed understanding and control of the deposition process at it relates to the chemical purity and structural perfection of the resulting single crystal diamond films, in addition, detailed characterization of the films has allowed for meaningful preparation characterization electronic property relations. The ultimate goal of the proposed research is to fabricate transistors on single crystal heteroepitaxial diamond and to fabricate small scale integrated circuit operational at 400-500 deg C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1994
- Accession Number
- ADA294519
Entities
People
- Andrzej Badzian
- Gennady Gildenblat
Organizations
- Pennsylvania State University