A Comparison of Silicon UMOSFETs Versus GaAs Vertical FETs For Low Voltage, Synchronous Rectification at 2.5 MHz.

Abstract

A comparison between the rectification efficiency of silicon UMOSFETs versus GaAs vertical FETs in a 1.5 volt, 2.5 megahertz power supply application is presented. A new figure of merit describing conduction and switching losses of synchronous rectifiers in a resonant circuit is developed to compare losses. A method to minimize losses by optimizing die area is discussed. A summary of present silicon and GaAs vertical channel FET technology is presented. Theoretical and experimental results are reported for the best silicon UMOSFET and GaAs VFET designs. It is shown that the GaAs VFET is substantially more efficient with approximately 1/3 the loss of the silicon approach.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1992
Accession Number
ADA294524

Entities

People

  • Guy Sills
  • James Yuan
  • Prasad Venkatraman
  • Robert Kollman
  • Tsengyou Syau

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Circuits
  • Diodes
  • Efficiency
  • Electrical Properties
  • Electron Mobility
  • Electronics
  • Field Effect Transistors
  • Figure Of Merit
  • Frequency
  • High Electron Mobility Transistors
  • Low Voltage
  • Packing Density
  • Power Supplies
  • Rectifiers
  • Resonant Circuits
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology