Properties of E-Beam Interactive Oxide Films for Nanometer Scale Structures.
Abstract
E-beam generated ultrastructures in oxide and halide film substrates have been investigated for high density memory and lithographic applications. In order to create the nanometer scale patterns (holes, lines, channels), a dedicated STEM was used and also used for exposure studies, imaging, microdiffraction analysis and for monitoring the transmitted beam. High ionic character, high heat of formation and high melting point were identified as desirable material characteristics by the oxide film studies. Therefore, halide materials were studied in order to evaluate the formation time for its film structures using the e-beam method. Amorphous AlF3 film was deposited on to substrate at cryogenic temperature. Hole resolution in the sputtered halide films of 5 nm holes on 8.1 nm centers was achieved with exposure times in the millisecond range, 2 approx. 3 orders of magnitude lower than produced by other technique. The generated oxide films for applying high density memory needs the apparatus to read/write using oxide films. This report describes an E-beam addressed, high speed, mass memory system that would be capable of 10(exp 12)-10(exp 14) bits with a data transfer rate about 106 bits per seconds. The development of the storage medium and the proper electron beam optics system for the mass memory system is a most crucial element of E-beam generated ultrastructures. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1995
- Accession Number
- ADA294627
Entities
People
- B. Kim
- R. C. Buchanan
Organizations
- University of Cincinnati