Transport Limitations in Selective Diamond Deposition.

Abstract

A high-selectivity diamond deposition process has been developed for feature sizes ranging from 0.6 micrometer to 2 cm. Variations in diamond growth rate as a result of this patterning have been observed and modeled by a finite difference method. This work provides a critical test of the interplay between surface kinetics and mass transport effects on the chemical vapor deposition process. The control of crystallite spacing may prove useful in fabrication of devices for cold-cathode emission and in growing contiguous polycrystalline films with well-defined grain structure. jg

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1995
Accession Number
ADA294686

Entities

People

  • Karen K. Gleason

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Engineering
  • Chemical Vapor Deposition
  • Chemistry
  • Diamond Films
  • Diffusion Coefficient
  • Engineering
  • Films
  • Infrared Spectroscopy
  • Magnetic Resonance
  • Materials Processing
  • Nuclear Magnetic Resonance
  • Particle Size
  • Particles
  • Polycrystals
  • Substrates
  • Transport Ships
  • Vapor Deposition

Readers

  • Materials Science and Engineering.
  • Nanocomposite Materials Science
  • Semiconductor Device Technology

Technology Areas

  • Space
  • Space - Hall-Effect Thruster