5-Picosecond Photoconductive Sampling Oscilloscope.

Abstract

During our Phase I SBIR we developed a novel laser-driven picosecond sampling photogate that has 5-picosecond temporal resolution and 10-microvolt sensitivity. The sampling gate system is evaluated and applied to several testing environments. To improve the sensitivity further, and lower the required excitation light level, we use a high-impedance transimpedance preamplifier stage. This amplifier permits us to measure signals down to 1 microvolt using less than 10 microwatts of average optical power. The sampling gate technology has now been extended to picosecond time domain reflectometry measurements. Furthermore, we have coupled the picosecond sampling gate to a Picoprobe test probe to measure signals from circuits on wafer. This sampling gate system has now been applied by us to test all our high speed photodetectors. Finally, we have engineered low temperature MBE grown In0.25Gao.75As (LT- In0.256Ga0.75As ) that shows a temporal resolution of 4.2 picoseconds.

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Document Details

Document Type
Technical Report
Publication Date
Apr 14, 1995
Accession Number
ADA294709

Entities

People

  • Steven Williamson

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Detectors
  • Electric Fields
  • Electron Beam Lithography
  • Field Effect Transistors
  • Frequency
  • Frequency Response
  • Impedance
  • Low Temperature
  • Materials
  • Measurement
  • Photolithography
  • Picosecond Time
  • Sampling
  • Semiconductors
  • Time Domain Reflectometer
  • Transmission Lines

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy