Ion Assisted Deposition of ZnS and MgF2 Film.
Abstract
ZnS and MnF2 films have been prepared by Ar ion assisted deposition.The packing density of MgF2 has been increased from 0.8 to 0.9-0.95 without ion bombardment as determined by the wavelength shift measurement after moisture absorption by filter. It is shown that high energy bombardment (>1 keV) increases the absorption and scattering loss, while the low energy bombardment is shown to increase significantly the abrasion resistance and adherence of film without affecting the optical properties. Therefore, it will play a very important role in preparing durable coatings for temperature sensitive substrate. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1995
- Accession Number
- ADA294759
Entities
People
- Chen Yuming
- Gu P. Fu
Organizations
- National Air and Space Intelligence Center