Development of a Digital X-Ray Topographic Mapping Technique for Automated, Rapid Characterization of Production GaAs Wafers.
Abstract
This research program was to develop a digital and automated x-ray topographic technique for use a rapid quality control tool in characterizing 3' GaAs wafers. The conclusions show that the DARC topography system is a tool capable of providing users with the information needed to characterize production III-V and II-VI semiconductor wafers. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 30, 1988
- Accession Number
- ADA294787
Entities
People
- Alfred L. Wiltrout
- Douglas C. Leepa
- Ronald G. Rosemeier
- S. B. Trivedi
- T. S. Ananthanarayanan