Use of D2 to Elucidate OMVPE Growth Mechanisms.

Abstract

The research concentrated on two important areas of organometallic vapor phase epitaxial growth: (1) A study of the pyrolysis reactions and rates for five new antimony precursors: trivinylantimony (TVSb), triisopropylantimony (TIPSb), triallylantimony (TASb), tertiary- butyldimethyl-antimony (TBDMSb), and diisopropylantimonyhydride (DIPSbH). They have been compared with the standard precursor, trimethylantimony (TMSb). The pyrolysis temperatures for TIPSb, TASb, TBDMSb, and DIPSbH are all much lower than for TVSb, which is similar to TMSb. The pyrolysis mechanisms are surprisingly dissimilar. (2) The effect of adding tertiarybutyl radicals (from azo-t-butane pyrolysis) on the low temperature growth of GaAs using trimethylgallium (TMGa) and arsine. The pyrolysis of both precursors is stimulated by t-butyl radicals. The growth rate at 450 deg C is found to be enhanced by a factor of 6, giving good morphology layers. The properties of the layers were studied using X-ray diffraction, photoluminescence, and Raman spectroscopy. jg

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1994
Accession Number
ADA294999

Entities

People

  • Gerald B. Stringfellow

Organizations

  • University of Utah

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimony
  • Chemistry
  • Crystal Growth
  • Decomposition
  • Diffraction
  • Electronic Materials
  • Elimination Reactions
  • Epitaxial Growth
  • Low Temperature
  • Materials
  • Materials Science
  • Pyrolysis
  • Raman Spectroscopy
  • Spectroscopy
  • Vapor Phases
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

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  • Organic Chemistry
  • Semiconductor Device Technology