SiGeC Alloys for Optoelectronic Devices.

Abstract

Si(1-x-yGe(x)C(y) alloys have been actively investigated for use in heterojunction devices compatible with Si. Using the following values for the lattice constants of Si, Ge and C: (a)Si=0.54309 nm, (a)Ge=0.56576 nm and (a)C=0.35667 nm, and assuming Vegard's Law we obtain the condition on the ratio of Ge and C atomic fractions for lattice-matching to Si: x/y = 8.2. For Ge(1-y)C(y), binary alloys, the composition Ge(0.89)C(0.11) is predicted to be lattice-matched to silicon. jg p.2

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1995
Accession Number
ADA295007

Entities

People

  • J. Kolodzey

Organizations

  • University of Delaware

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Alloys
  • Band Gaps
  • Binary Alloys
  • Ceramic Materials
  • Crystal Lattices
  • Diffraction
  • Electron Microscopy
  • Energy Bands
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optoelectronic Devices
  • Spectroscopy
  • Transmission Electron Microscopy
  • X Ray Photoelectron Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Analytical Mechanics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics