Numerical Studies of Low Temperature Gallium Arsenide Buffer Layers and their Influence on Device Operation.

Abstract

Through the use of numerical methods involving both the drift and diffusion equations including traps, and more recently the quantum Liouville equation, Scientific Research Associates, Inc., (SRA) has been examining the physics and operation of LTG materials and devices. Both defect and Schottky models have been studied, and two-dimensional microscopic and macroscopic device simulations have been performed. A new generalization of the drift and diffusion equations, including current, has been implemented for the specific purpose of treating embedded metallic precipitates. This document summarizes SRA work under U.S. Air Force, Office of Scientific Research, Contract # F49620-9 1 -C-0023. jg

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Document Details

Document Type
Technical Report
Publication Date
Jun 17, 1994
Accession Number
ADA295015

Entities

People

  • Harold L. Grubin
  • John P. Kreskovsky

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Diffusion
  • Electron Density
  • Electrons
  • Energy Bands
  • Equations
  • Fermi Levels
  • Field Effect Transistors
  • Gallium Arsenides
  • Low Temperature
  • Metals
  • Scientific Research
  • Semiconductors
  • Simulations
  • Two Dimensional
  • Valence Bands

Readers

  • Computational Fluid Dynamics (CFD)
  • Electronics Engineering
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Quantum Computing