Heteroepitaxial Materials and Devices of III-V Arsenides and Antimonides by Molecular Beam Epitaxy.

Abstract

Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells have been demonstrated. Enhancement of normal incidence intervalence subband absorption in GaSb quantum wells coupled to a neighboring InAs has been observed. The orientation dependence of infrared absorption in AlAs/A1GaAs x-valley multiple quantum wells grown on GaAs and Si has been studied. InSb films with excellent x-ray rocking curve linewidths have been grown on GaAs and Si by molecular beam epitaxy for infrared detector applications. AlSbAs/InAs heterostructure field-effect transistors with high breakdown voltage has been achieved. jg

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1994
Accession Number
ADA295016

Entities

People

  • Wen I. Wang

Organizations

  • Columbia University

Tags

DTIC Thesaurus Topics

  • Crystal Growth
  • Detection
  • Detectors
  • Electrical Engineering
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Heterojunctions
  • Infrared Detectors
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Photodetectors
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Quantum Computing