The Growth of Ultrathin Epitaxial Intermetallic Films,
Abstract
FeAl has been grown on psuedomorphic AlAs films on GaAs substrates. The growth was characterized by in situ reflection high energy electron diffraction, transmission electron diffraction, and electron channeling. Procedures for the growth of high quality films were developed and the detects analyzed. It was found that a low temperature nucleation followed by a high temperature anneal and low temperature growth gave strong layer by layer growth. RHEED intensity oscillations were observed for the first time in a metal aluminide system, allowing for precise control over ultrathin films. The first metal aluminides grown using metal organics were prepared. The results indicated that though there were advantages to this procedure, it was necessary to use full chemical beam epitaxy to avoid carbon contamination. The first measurement of critical thickness was made. GaAs was grown on top of FeAl films. The construction of a scanning tunneling microscope was begun. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 02, 1994
- Accession Number
- ADA295037
Entities
People
- P. I. Cohen
Organizations
- University of Minnesota