Thin Film Routes to New Materials.
Abstract
Thin films of Sr sub (1-x)CuO2-8 with the infinite-layer structure were prepared using the single target rf-magnetron sputtering method. The substrate was MgO or SrTiO3 in an off-axis configuration. Previous reports have focused on films prepared on MgO substrates. This report focuses on films prepared on SrTiO3 substrates. The structure and the electrical properties of the films were found to be sensitive to the oxygen pressure during sputtering. Quantitative analysis of X-ray diffraction data indicated that films formed under lower oxygen pressure possessed a larger concentration of defects and higher electrical resistivities. The highest conductivity was observed in a film which contained two infinite-layer phases, one with a relatively low concentration of defects and another with a higher concentration of defects. A discussion is given of the necessary corrections that must be made in order to quantitatively evaluate epitaxial thin film X-ray diffraction intensities measured with a theta - 2 theta diffractometer. (MM)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1994
- Accession Number
- ADA295134
Entities
People
- Arthur W. Sleight
Organizations
- Oregon State University