Novel Hybrid Superconductors/Semiconductor Heterostructures Devices.
Abstract
The initial proposal argued a case for a research on a combination of superconducting electrodes (films) with sophisticated III-V epitaxial semiconductor structures exhibiting quantum 2-D electron effects. The materials envisioned at that time included In(Ga)As/AlSb epitaxial multilayered structures and Nb films. The dual purpose was to study physics at Superconductor - Semiconductor (Su-Sm) interfaces and to try and create devices of the superconducting FET type with low power dissipation and high transconductance (rate of change of the channel current with the applied gate voltage, dI(sub CH)/dV(sub G) jg p.2
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1994
- Accession Number
- ADA295460
Entities
People
- A. Kastalsky
- M. Gurvitch
Organizations
- Stony Brook University