Electrically Pumped Erbium Pumped Silicon Lasers.
Abstract
Rare earth doped semiconductors offer the possibility of electrically pumped, efficient, and inexpensive integrated optical amplifiers and CW sources for use in optical communications systems. This final report discusses research into Er doped GaN and Si materials. Cathodoluminescence (CL) measurements have yielded strong Er3+ luminescence in Er and Oxygen implanted GaN films on sapphire and Er and 0 in sapphire. Multiple spectral peaks from the IR, through the visible, and into the near UV have been identified as atomic 4f shell transitions from the Er in sapphire. Photoluminescence (PL) using an Argon laser (514 nm) on one GaN:Er:O sample showed weaker luminescence at 1540 nm. The CL temperature dependence of the 1540 nm peak was found to drop by only a few percent from 6 K to 300 K in the GaN:Er:O. The intensity dropped to 25% of the 6 K value at 380 K. Refractive index measurements of some GaN:Er samples are also presented. Various Er-doped Si samples were studied. Some were implanted with Er while the others were grown epitaxially using chemical vapor deposition. PL of these samples was seen using an 80 mW 980 nm laser diode. (MM)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1995
- Accession Number
- ADA295623
Entities
People
- Bruce Willner
- Jacques Pankove
- John Torvik
- Robert Feuerstein
Organizations
- University of Colorado Boulder