Low Temperature Deposition and Characterization of N- and P-Type Silicon Carbide Thin Films and Associated Ohmic and Schottky Contacts.
Abstract
Monocrystalline Beta(3C-SiC films were grown on alpha (6H)-SiC(0001) substrates using gas-source MBE, silane and ethylene precursors and a temperature range of 1050 deg-145O deg C. Cubic (3C)-SiC was achieved at all T< 1400 deg C; 6H-SiC films achieved at T>1400 deg C when H2 diluent was present. The surface electronic states of clean 6H-SiC were investigated using ARUPS. Deposition and subsequent evaporation of Si and were used to clean the surface. LEED, AES and XPS showed that essentially all 0 and C contamination was removed ARUPS revealed that all surfaces on the clean 6H-SiC except those terminated by H exhibited a degree of surface resonance (surfaces states) as a result of dangling bonds. H termination unpinned the surface Fermi level. NiAl contacts with a Ni passivating layers were deposited at room temperature on p-type 6H-SiC (0001) substrates. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1995
- Accession Number
- ADA295668
Entities
People
- J. P. Barnak
- M. C. Benjamin
- O Aboelfotoh
- Robert F Davis
- Robert J. Nemanich
Organizations
- North Carolina State University