International Conference on Indium Phosphide and Related Materials (7th) Held in Sapporo, Hokkaido, Japan on May 9 - 13, 1995.
Abstract
Optical Networks Towards the 21 Century and the Role of Partial contents: InP-Based Devices; Status and Promise of InP Electronics; Leading-Edge Optoelectronic Device Production Using Two-Inch Technology; High Temperature Operation of AlGalnAs/InP Lasers; MOCVD Growth and Characterization of Tensile-Strained Ga(x)In(1-x)As(y)P(1-y) Quantum Wells for Low Threshold Lasers Emitting at 1 .3 micrometers; CW Operation of a 1 .3 micrometers Strained Quantum Well Laser on a Graded InGaAs Buffer with a GaAs Substrate; Four-Wavelength DBR Laser Array with Waveguide-Couplers Fabricated Using Selective MOVPE Growth; Effect of (GaP)m/(InP)m Short Period Binary Superlattice Period on Quantum Wire Formation Strain Induced Lateral Layer Ordering in GaInP/AlInP Multi-Quantum-Wire Lasers; Crystal Growth Preparation of Homogeneous InP Substrates by VGF-Growth and Wafer Annealing; Effect of Annealing Conditions on the Uniformity of Undoped Semi-Insulating InP; Iron Segregation in LEC InP Crystals; Multicomponent Zone Melting Growth of Ternary InGaAs Bulk Crystal. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1995
- Accession Number
- ADA295693
Entities
People
- Edward L. Labuda
Organizations
- Institute of Electrical and Electronics Engineers