Rapid Thermal Processing of Semiconductors at High Vapor Density.

Abstract

The fluid dynamics in a vertical reactor for high pressure vapor transport (HPVT) of compound semiconductors is modeled. The modeling is for the growth of II-IV-V2 chalcopyrite ZnGeP2 and addresses the flow of dense phosphorus gas at 3.42 x 10(exp 5) Pascals pressure. Effects of density variations on p-polarized reflectance spectroscopy are also examined. The mathematical model for transport processes is described by the full gasdynamic equations (Navier Stokes equations coupled with an equation for energy). In addition, buoyancy effects are included in the model through the gravitational term in the momentum equation. Numerical results of a 3-D steady flow are presented using a finite element discretization with non-uniform, quadrilateral elements. The numerical simulations were performed to study the effects of gravitational-induced buoyancy-driven convection flows in HPVT crystal growth. jg

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Document Details

Document Type
Technical Report
Publication Date
Apr 25, 1995
Accession Number
ADA295763

Entities

People

  • H. Thomas Banks

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Compounds
  • Compound Semiconductors
  • Crystal Growth
  • Elements
  • Equations
  • Fluid Dynamics
  • Materials
  • Materials Science
  • Mathematics
  • North Carolina
  • Optical Properties
  • Physical Chemistry
  • Semiconductors
  • Simulations
  • Three Dimensional
  • Transport Ships
  • Universities

Readers

  • Computational Fluid Dynamics (CFD)
  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene