Fullerness Film IR Detectors.
Abstract
On the base of analysis of experimental results and theoretic researches the phenomenological model of a charge carrier generation under the action of irradiation is presented, and the carrier transport in thin film photoadvices is discussed. A possibility of IR- sensible devices realization on the base of high fullerenes or doped fullerenes is considered. It is proposed to study Shottky transition and heteroJunction with polymers for realization of all photosensive properties of fullerenes. On the base of extended Huckel model the numeric calculations of electron structure of high fullerenes and the search of isomers with defined band gap value are made. Experimental researches of absorption spectra for UV-, optic and IR-bands are made. (MM)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1995
- Accession Number
- ADA296005
Entities
People
- A. A. Dityatyev
- A. A. Mazaev
- A. A. Tikhomirov
- A. E. Gurey
- O. G. Semenov