Blue Semiconductor Lasers Based on Wide-Band-Gap II-VI Materials.

Abstract

A high resolution study of the optical emission from nitrogen-plasmas produced by an Oxford Applied Research radio frequency plasma source is reported. The use of electron cyclotron resonance (ECR) plasma sources has led to recent advances in the growth of GaN and other III-V nitride semiconductors by molecular beam epitaxy (MBE). Methods have been developed for the MBE-growth of integrated heterostructure devices containing both narrow-band-gap and wide-band-gap II-VI materials. Device processing procedures were also developed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1994
Accession Number
ADA296452

Entities

People

  • J. F. Schetzina

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Cyclotron Resonance
  • Electronics Laboratories
  • Energy Bands
  • High Resolution
  • Laser Diodes
  • Lasers
  • Light Sources
  • Materials
  • Optical Properties
  • Power Electronics
  • Quantum Efficiency
  • Quantum Wells
  • Refractive Index
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics