Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films.
Abstract
Investigations at North Carolina State University and Arizona State University concerned with the preparation of substrate surfaces, theoretical modeling of atom/surface collisions and subsequent growth mechanisms, design of new supersonic jet systems and ion beam technologies, and deposition of GaN films via supersonic processes have been conducted during this reporting period. Chemical etching and oxidation were examined in an unsuccessful attempt to remove scratches from the surfaces of 6H-SiC(OOO 1)si and (0001)c substrates for use in growth of 111-V nitride thin films. Quantum molecular dynamics of projectile molecules colliding with surfaces have been initiated to understand the processes ongoing when supersonic beams of atoms or molecules collide with a substrate surface. Growth processes at longer time scales are also being investigated using Monte Carlo simulation. The design of supersonic beam sources for use with LEEM characterization at ASU has been completed. The construction of a dual supersonic beam deposition system with an attached UHV analysis system is ongoing. A dual Colutron ion-beam system is also under construction for the deposition of SiC and GaN. Stoichiometric GaN films have been deposited on Al203(OOO1), Si(OOl) and Si( 111) substrates using an NH3-seeded free He jet and an effusive triethylgallium (TEG) source. Very uniform films have been achieved at low temperatures. (AN)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1995
- Accession Number
- ADA296634
Entities
People
- E. Bauer
- H. Henry Lamb
- I. S. Tsong
- R. B. Doak
- Robert F Davis
Organizations
- North Carolina State University