Nitride Semiconductors for Ultraviolet Detection.
Abstract
Continued development and commercialization of optoelectronic devices, including light emitting diodes and semiconductor lasers produced from III-V gallium arsenide-based materials, has also generated interest in the much wider bandgap semiconductor mononitride materials containing aluminum, gallium, and indium. The majority of the studies have been conducted on pure gallium nitride thin films having the wurtzite structure, and this emphasis continues to the present day. The program objectives achieved in this reporting period have been (1) the growth of undoped, high resistivity and n- and p-type doped monocrystalline, GaN thin films on alpha(6H)-SiC(000l) wafers via organometallic vapor phase epitaxy (OMVPE), and their characterization via photoluminescence (2) the growth and cathodoluminescence characterization of Al (x)Ga(1-x)N alloys and abrupt heterojunctions of these alloys, (3) the development and application of a novel NH3 cracker cell for gas source MBE to reduce film damage and (4) the reactive ion etching of undoped GaN films via use of Cl-containing compounds. jg p.4
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1995
- Accession Number
- ADA296746
Entities
People
- B. Ferry
- K. Gruss
- K. Linthicum
- M. D. Bremser
- Robert F Davis
Organizations
- North Carolina State University