LEC Growth of Bulk In(x)Ga(1-x)As.

Abstract

A Double Crucible Liquid Encapsulated Czochralski (DCLEC) process was developed for the growth of single crystals of In(x)Ga(1-x)As. The conditions for the flow of non-wetting liquids through capillaries were determined and applied to Hot Pressed Boron Nitride crucibles to achieve stable flow of InGaAs melts, without back-diffusion of In, and without interference from the boric oxide encapsulant. The problem of mixing int the inner crucible was solved by the use of supercooled melts to obtain fine grained, uniform composition pre-cast charges. Growth of In(x)Ga(1-x)As with x values up to 0.035 was achieved. This material was semi-insulating. jg p.1

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Document Details

Document Type
Technical Report
Publication Date
Jun 13, 1995
Accession Number
ADA297039

Entities

People

  • Mark Morris
  • Mark Tiernan
  • R. A. Puechner
  • Rowland M. Ware

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Compound Semiconductors
  • Crucibles
  • Crystal Growth
  • Crystal Structure
  • Crystals
  • Diffusion
  • Diffusion Coefficient
  • Electron Mobility
  • Equations
  • High Electron Mobility Transistors
  • Materials
  • Microvessels
  • Phase Diagrams
  • Semiconductors
  • Temperature Gradients
  • Thermal Conductivity

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene