High Speed MISFETs and Device Physics.
Abstract
We have investigated MISFETs based on GaAs, InGaAs, and InP materials with promising potential for microwave and high speed digital applications. Using state-of-the-art MBE and vacuum connected UHV CVD, the gate dielectric layer was deposited without exposing the surface to contaminants. The insertion of a thin layer of Si between the Si3N4 and GaAs and other II-V compounds led to improved interfaces. The gate dielectric quality in terms of low leakage and high breakdown voltage has been improved to a level comparable to that achieved by the thermal CVD method which must be performed at high temperatures not accessible by compound semiconductors. Our effort is directed toward the eventual realization of inversion-mode devices analogous to the traditional IC processing technologies. jg p.1
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 26, 1995
- Accession Number
- ADA297095
Entities
People
- Hadis Morkoç
Organizations
- University of Illinois Urbana–Champaign