Low Temperature Epitaxial Growth of Rare Earth Doped Silicon and Silicon Germanium Alloys.
Abstract
This document reports on the progress towards the growth of rare earth dope Si by low temperature plasma enhanced chemical vapor deposition (PECVD). The goal of this investigation is to develop a commercially compatible technique to deposit thick, high concentration, precipitation free, rare earth doped Si films. The low temperature growth technique used is plasma enhanced chemical vapor deposition with an electron cyclotron resonance(ECR) source. Low temperature processing is needed to avoid the formation of ErSi2 precipitates which are known to be optically inactive. Epitaxial Si films doped with varying concentrations of Er have been grown in this investigation at low substrate temperatures ( <500 deg C). The Er dopant sources are sublimed metal organic compounds. A total of four different metal organic compounds have been tried in the deposition process. Three of these compound were synthesized for this investigation by Prof. Kazi Ahmed. Film quality and doping concentration were determined by Rutherford backscattering spectrometry(RBS). Recently, film quality has also been analyzed by X-ray diffraction rocking curves and cross sectional transmission electron microscopy. The X-ray technique has been made available through an NSF-EPSCoR equipment grant to the University of Vermont. jg p.4
Document Details
- Document Type
- Technical Report
- Publication Date
- May 21, 1995
- Accession Number
- ADA297099
Entities
People
- Walter J. Vrahue