Investigation of Novel Devices in Wide Bandgap Semiconductors.
Abstract
Silicon carbide is a wide bandgap semiconductor that is well suited for high power, high temperature electronic devices due to its remarkable electronic and thermal properties. Photosensitive devices in the 6H polytype of SiC have also been demonstrated, showing high sensitivity in ultraviolet wavelengths near 270 nm. Furthermore, the native oxide on SiC is silicon dioxide, meaning that SiC can be thermally oxidized to form a high quality gate dielectric, making metal-oxide-semiconductor (MOS) devices possible. These qualities make silicon carbide ideal for constructing UV sensitive CCD imagers. This work investigates the feasibility for developing imagers in SiC through the fabrication and demonstration of a buried channel CCD linear shift array. jg p.5
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 25, 1995
- Accession Number
- ADA297251
Entities
People
- James A. Cooper Jr.
- Michael R. Melloch
- Scott T. Sheppard
Organizations
- Purdue University