Ohmic Contact to Ion Implanted Gallium Arsenide Antimonide for Application to Indium Aluminum Arsenide/Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors.
Abstract
The p-channel In(0.52)Al(0.48)As/GaAs(1-x)Sb(x) heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In(0.52)Al(0.48)As/GaAs(1-x)Sb(x) p-HIGFET requires improved source/drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In(0.52)Al(0.48)As/GaAs(0.51)Sb(0.49) HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped GaAs(0.51)Sb(0.49). Third, high acceptor concentrations were obtained on GaAs(1-x)Sb(x) using beryllium ion implantation. Fourth, Au/Zn/Au and Ti/Pt/Au were compared as ohmic contact metallizations to these highly doped layers. Finally, In(0.52)Al(0.48)As/GaAs(0.51)Sb(0.49) HIGFETs were fabricated and characterized using Ti/Pt/Au metallization and Be implantation. An array of characterization methods were employed to thoroughly characterize materials and devices including: transmission line measurements (TLM), electrochemical profiling, photoluminescence (PL), atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), cross-sectional transmission electron microscopy (XTEM), selected area diffraction (SAD) and energy dispersive X-ray analysis (EDX). jg p.25
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1995
- Accession Number
- ADA297604
Entities
People
- Kenneth G. Merkel Ii
Organizations
- Air Force Institute of Technology