The Synthesis and Characterization of Gallium-Arsenic Monomers, Chains, Cycles, and Clusters.
Abstract
Although gallium arsenide is widely studied because of its importance in semiconductor technology, and there is the expectation that the gallium arsenic bond in polymeric form will exhibit interesting electronic properties, there had been a paucity of knowledge regarding even the most simple gallium-arsenic compounds. The latter is exemplified by the fact that when we initiated our program in organogallium- arsenic chemistry in 1983, the latest report of any activity in this area was in 1965. During the time this contact was active, we prepared a number of new gallium-arsenic compounds using the method of Coates (i.e., "alkane" elimination) and also applied two new methods of synthesis. These methods are dehalosilylation between a silylarsine and a halogallane, and coupling using a lithium arsenide and a halogallane. Among the compounds prepared are the first examples of bis- and tris(arsino)gallanes, a novel gallium-arsenic cluster, and the first monomeric tricoordinate tris(arsino)gallane, the first gallium- arsenic compound containing a single Ga3As unit, and the first organogallium four-membered ring compound with arsenic, halogen mixed-bridging. Dynarnic NMR studies of two of the bis(arsino)gallanes showed they have novel fluxional properties. In addition, we successfully used dehalosilylation reactions to prepare gallium arsenide and indium arsenide.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 08, 1991
- Accession Number
- ADA298307
Entities
People
- Richard L. Wells
Organizations
- Duke University