Proceedings of the International Symposium on Compound Semiconductors (21st) Held in San Diego, California on 18-22 September 1994,
Abstract
The field of compound semiconductors has changed significantly since the first International Symposium on GaAs was held in 1966. By the time the third symposium was held in 1970, the scope was expanded to include new work on GaP, InP and mixed crystals of III-V compounds. Correspondingly, the symposium was renamed Gallium Arsenide and Related Compounds. As the need to improve the performance and expand the capability of electronic and photonic devices continually drives our research into new materials and fabrication/characterization technologies, the symposium has continued to modify its scope to remain current. However, the charter remains unchanged. The 21st international Symposium on Compound Semiconductors continues to provide a forum for the myriad activities involved in the conception, fabrication, application and analysis of compound semiconductor devices. Here, researchers have the unique opportunity to discuss subjects with participants from many disciplines and come away from the symposium with perspectives on their own work that could not be so readily obtained in other ways. jg p.12
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1994
- Accession Number
- ADA298464
Entities
People
- Herb Goronkin
- Umesh Mishra
Organizations
- University of California, Santa Barbara