Heteroepitaxial Diamond Growth.
Abstract
This is the 1994 third quarterly report on the Heteroepitaxial Diamond Growth Program Contract No. N-0004l-92-C-008 1. Work progressed in one major area this quarter: improvement of diamond homoepitaxy. The ability to do excellent, routine diamond homoepitaxy is in the critical path for any large-area single-crystal diamond technology. It is a cornerstone of our efforts to produce a large-area single-crystal diamond substrate via a tiled array. This progress in CVD growth of homoepitaxial diamond is described herein. Additionally, we have summarized our tiled array (epitaxial joining) work by publishing two papers in the open literature. Another manuscript was submitted for publication that gives our current interpretation on the role of hydrogen on the negative electron affinity (NEA) diamond surface. These manuscripts are included in this report. jg p.4
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1995
- Accession Number
- ADA298591
Entities
People
- G. Hudson
- John B. Posthill
- R. E. Thomas
- Robert J. Markunas
- Ronald A. Rudder
Organizations
- RTI International