Heteroepitaxial Diamond Growth.

Abstract

This phase of the program saw progress in four key technology areas: (1) homoepitaxial diamond optimization, (2) epitaxial joining to form a tiled array, (3) diamond single-crystal lift-off, and (4) negative electron affinity (NEA) of diamond surfaces. These results are summarized. jg p.2

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1995
Accession Number
ADA298592

Entities

People

  • G. Hudson
  • John B. Posthill
  • R. E. Thomas
  • Robert J. Markunas
  • Ronald A. Rudder

Organizations

  • RTI International

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Space

DTIC Thesaurus Topics

  • Abstracts
  • Ballistic Missiles
  • Charged Particles
  • Classification
  • Crystals
  • Electrical Properties
  • Electrons
  • Information Operations
  • Ion Implantation
  • Materials
  • Military Research
  • North Carolina
  • Optimization
  • Security
  • Single Crystals
  • Triangles

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics