Heteroepitaxial Diamond Growth.

Abstract

The combination of several processes, including 600 deg C homoepitaxial diamond growth with water/alcohol mixtures, has enabled the lift-off of a synthetic single-crystal C(100) plate of dimensions 2.0 mm x 0.5 mmx 17.5 micrometers. The essence of this lift-off (or cutting) technique involves forming a buried damaged layer in a diamond single-crystal substrate while still maintaining the crystalline surface suitable for homoepitaxy. After completion of epitaxy, the damaged region is graphitized and exposed to an etching environment from the edges, thereby enabling the synthetic crystal to lift-off. jg p.2

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1995
Accession Number
ADA298593

Entities

People

  • G. Hudson
  • John B. Posthill
  • R. E. Thomas
  • Robert J. Markunas
  • Ronald A. Rudder

Organizations

  • RTI International

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystals
  • Diamond Films
  • Electron Diffraction
  • Electron Microscopy
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Films
  • Ion Implantation
  • Materials
  • Single Crystals
  • Spectra
  • Substrates
  • Surface Properties
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.