Microwave Properties and Device Application of Ge(x)Si(1-x)/Si Superlattices.
Abstract
This project entitled Microwave Properties and Device Application of Ge(x)Si(1-x)/Si Superlattices (N00014-91-J-1902) was a continuation of project entitled Fundamental Properties and Device Application of Ge(x)Si(1 -x)/Si Superlattices (N00014-89-K- 3227). Our investigation has been extended to expand the work in the study of Ge(x)Si(1-x)/Si superlattice and quantum well structures into the electromagnetic wave generation and detection applications. The study and its results for the additional 7-month period of experiment will briefly be discussed in the following. In this period, the energies of the minibands were investigated experimentally using the I-V-T measurement. The experimental values for the first and second miniband positions were 95 meV and 250 meV, respectively. These values were in good agreement with the calculated values of 91 meV and 220 meV from the emitter band edge taking the heavy and light-hole band splitting into consideration. jg p.2
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1992
- Accession Number
- ADA299135
Entities
People
- Kang L. Wang
Organizations
- University of California, Los Angeles