InAsP/InGaAs Materials Development for 2.1 Micron Avalanche Photodiodes. Phase 2.

Abstract

A full 2.1 micrometers InAsP/InGaAs avalanche photodiode structure was fabricated, processed, and fully tested during the past quarter. Although results were disappointing, it was only a first try and in fact, represented a "leap" beyond our proposed schedule. Figures 1 through 3 contain summaries of the measured data. Briefly, breakdown voltages were below 10 volts and dark currents at -5V were in the microamp range. A cutoff wavelength of 2.10 micrometers was also measured. Avalanche gain was not observed under any conditions. We attribute to high dark currents to lattice mismatch at the InAsP/InGaAs interface and also the high background doping. A paper, based on our Phase I results, has been written (copy attached) and is undergoing internal review before being submitted to IEEE Photonics Technology Letters. jg p.2

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1994
Accession Number
ADA299170

Entities

People

  • Alvin Goodman
  • Gregory H. Olsen

Tags

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Detection
  • Diameters
  • Diodes
  • Efficiency
  • Illumination
  • Materials
  • Measurement
  • Metal Contacts
  • Phase
  • Photodiodes
  • Photonics
  • Quantum Efficiency
  • Thickness
  • Vapor Deposition

Readers

  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy