Isotopically Enriched (28)Si Crystals for Electronics Applications.

Abstract

The objective of this research is to study the thermal and electronic properties of isotopically enriched (28)Si epitaxial films which are potentially attractive for high density, high-speed electronic circuit applications. The natural abundance of Si is roughly 92.2% of (28)Si, 4.7% of (29)Si, and 3.1% of (30)Si, which is also roughly the composition of Si crystals currently used in industry. By removing the heavier isotopes (i.e., (29)Si and (30)Si), it is very likely that the enriched (28)Si crystal will have a much better thermal conductivity and carrier mobility, due to the reduction of the scattering centers arising from the heavy isotope 'impurities'. jg p.3

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Document Details

Document Type
Technical Report
Publication Date
Aug 16, 1993
Accession Number
ADA299209

Entities

People

  • Tso-ping Ma

Organizations

  • Yale University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbon Dioxide Lasers
  • Carrier Mobility
  • Computer Programs
  • Conductivity
  • Construction
  • Crystal Growth
  • Crystals
  • Electrical Engineering
  • Fabrication
  • Films
  • Heat Energy
  • Lasers
  • Materials
  • Measurement
  • Single Crystals
  • Temperature Gradients
  • Thermal Conductivity

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics