MBE Growth for Electronic and Photonic Device Applications.
Abstract
The goal of this research was to improve our understanding of MBE growth and to apply this understanding to practical devices for electronic and optoelectronic applications. We studied semiconductor quantum wells (QWs), achievable through control of layer thickness with monolayer accuracy, and distributed Bragg reflectors (DBRs) with high reflectivity designed for specific wavelengths. We developed microcavities for both light emitters and detectors, which have resonant cavities on the order of a single wavelength of light. The resonant cavity photodiode structure in effect decouples the quantum efficiency from the transit time. Lasers and detectors employing such resonant cavities on the wavelength scale will play an important role in a variety of future optoelectronic applications, and for optical interconnects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 24, 1995
- Accession Number
- ADA299217
Entities
People
- Ben G. Streetman
Organizations
- University of Texas at Austin