Visible Light Emitting Materials and Injection Devices.
Abstract
Partial contents: Molecular beam epitaxy growth of II-VI and III nitrides; Ohmic contact formation; Microstructural analysis of II-VI and III-V materials; Optical and electrical characterization of ZnSe; MOCVD growth of MgZnCdS thin films; Development of diode lasers; Theoretical calculations of dopants of ZnSe; MOCVD growth of GaN; Gain modeling in II-VI strained layer quantum wells structures. jg modified abstract
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1994
- Accession Number
- ADA299225
Entities
People
- Paul H. Holloway
Organizations
- University of Florida