'InAsP/InGaAs Materials Development for 2.1 micrometers Avalanche Photodiodes. Phase 2.
Abstract
Detailed measurements were carried out on our full InGaAs/InAsP APD structure optimized to detect light out to 2.l micrometers. Avalanche gains well above ten were confirmed independently, at Sarnoff as well as at Princeton University. Figures 1 and 2 contains some typical data from two 100 micrometers-diameter mesa devices. Note the gains of 10-40, dark currents near or below 1 micro a at -10V and breakdown voltages of 30-35 volts. An 8 micrometers diameter single-mode fiber was used to scan light across the entire active region to check for edge breakdown. No enhanced gain was detected near the edges, thus validating our "p-substrate-mesa" approach to this device. jg p.2
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 24, 1995
- Accession Number
- ADA299236
Entities
People
- Alvin Goodman
- Gregory H. Olsen