Erbium Doped Silicon LEDs Using IC Compatible Processing. Phase 1.
Abstract
This Final Report describes the technical approach and research effort during the Phase I STTR program. The purpose of the program is to demonstrate the capability of the IC compatible process technology of rare earth ion implantation for the integration of photonic interconnection with silicon based electronics. The objective of the Phase I research was to fabricate a simple light emitting device using low energy (<1MeV) rare earth ion implantation. Room temperature emission at the characteristic wave length of 1.54 micrometer was observed at room temperature. Additionally, many of the performance characteristics of the IC compatible 400 keV Er implanted LED's exceed those fabricated using more difficult and costly MeV implantation. jg p.4
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1995
- Accession Number
- ADA299259