Electroluminescing Porous Silicon Device.

Abstract

The main goal of this project was to determine the mechanism of operation of an all silicon, electroluminescing device. The device consists of an n+ silicon "wire" supported on top of a layer of porous silicon. Other aims included the evaluation of the device's light emitting efficiency and it's potential as a silicon-based light source. The device emits light over a broad spectrum, extending from the visible into the infrared, with two dominant peaks, at 1.3 and 2.05 microns. An optical quantum efficiency of better than 6% was determined.

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Document Details

Document Type
Technical Report
Publication Date
Aug 11, 1995
Accession Number
ADA299433

Entities

People

  • John Penczek
  • Rosemary L. Smith

Organizations

  • University of California

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Blackbody Radiation
  • Chemistry
  • Efficiency
  • Electron Emission
  • Electrons
  • Emission
  • Field Effect Transistors
  • Light Sources
  • Metal Oxide Semiconductors
  • Optical Properties
  • P-N Junctions
  • Quantum Efficiency
  • Radiation
  • Semiconductors
  • Spectra
  • Surface Chemistry

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Spectroscopy.
  • Technical Research and Report Writing.

Technology Areas

  • Quantum Computing