Metal-Organic Vapor Phase Epitaxy of Controlled Deep Level Structures.
Abstract
The controlled introduction of oxygen into GaAs and In(x)Ga(1-x)As during metal organic vapor phase epitaxy was studied through the development of unique oxygen doping sources. The electrical, optical and other deep level properties of the GaAs: defect were studied over an oxygen concentration range of 10(exp 16) to 10(exp 20)/cu cm. Oxygen introduces several levels into the band gap of GaAs leading to the compensation of the electrically active shallow dopants and a reduction in the band edge photoluminescence. High resistivity GaAs films can be produced using oxygen doping with resistivities in excess of 10(exp 9)/Ohms. cu cm indicating that this material can be one of the most effective device isolation materials yet developed. Since this process is easily integrated into the existing MOVPE growth technology, high resistivity layers can be made part of the device structure. The immediate application of these materials could be in microwave devices where the high resistivity of the materials can be used to eliminate the device crosstalk which can diminish the performance of these circuits. High power electronic devices and higher performance optical detectors may also be possible. jg p.1
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 23, 1995
- Accession Number
- ADA299532
Entities
People
- Kevin L. Bray
- Thomas F Kuech
Organizations
- University of Wisconsin–Madison